![]() ![]() Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development. We achieve fast electrical control of hole spins with driving frequencies up to 150 MHz, single-qubit gate fidelities at the fault-tolerance threshold and a Rabi-oscillation quality factor greater than 87. Consequently, new MOSFET devices such as a fin field-effect transistor (FinFET) and a gate-all-around field-effect-transistor device have been proposed to surpass these limitations 1,2. The FinFET device structure includes a fin structure. Here we show that silicon fin field-effect transistors can host spin qubits operating above 4 K. A fin field effect transistor (FinFET) device structure and method for forming the same are provided. A BV of 800 V, an on-resistance (R on 2 and normally-off operation have been demonstrated 6. This transistor only needs n-GaN layers with no requirement for p-GaN or epitaxial regrowth. However, this requires qubit operation at temperatures above 1 K, where the cooling overcomes heat dissipation. device structure, the GaN vertical fin power field-effect transistor (FET) 6. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. A fin Field-Effect Transistor (FinFET) is a non-polar device built on a silicon substrate where the gate is placed on multiple sides of the channel. ![]() These devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate can serve as a spin qubit. ![]() Classical computing, which previously faced such issues, currently relies on silicon chips hosting billions of fin field-effect transistors. The greatest challenge in quantum computing is achieving scalability. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |